SUMMARY ABSTRACT - OPTICAL-PROPERTIES OF ALXGA1-X AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：1
|
作者：
REYNOLDS, DC
LITTON, CW
BAJAJ, KK
YU, PW
SINGH, J
PEARAH, PJ
MASSELINK, WT
HENDERSON, T
KLEM, J
MORKOC, H
机构：
[1] WRIGHT STATE UNIV,DAYTON,OH 45435
[2] UNIVERSAL ENERGY SYST INC,DAYTON,OH 45432
[3] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
[4] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：523 / 524
页数：2
相关论文
共 50 条
  • [41] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    CHO, AY
    RADICE, C
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4882 - 4884
  • [42] OPTICAL-PROPERTIES AND DYNAMIC BEHAVIOR OF LOCALIZED AND BOUND EXCITONS IN CD1-XMNXTE(X=4-PERCENT) GROWN BY MOLECULAR-BEAM EPITAXY
    AKINAGA, H
    TAKITA, K
    SASAKI, S
    TAKEYAMA, S
    MIURA, N
    NAKAYAMA, T
    MINAMI, F
    INOUE, K
    PHYSICAL REVIEW B, 1992, 46 (20): : 13136 - 13141
  • [43] OPTICAL-PROPERTIES OF GAP/ALP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    ASAMI, K
    ASAHI, H
    WATANABE, T
    ENOKIDA, M
    GONDA, S
    FUJITA, S
    APPLIED PHYSICS LETTERS, 1993, 62 (01) : 81 - 83
  • [44] ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED INP GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    POSTIGO, PA
    DOTOR, ML
    HUERTAS, P
    GOLMAYO, D
    BRIONES, F
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 402 - 404
  • [45] OPTICAL-PROPERTIES OF (ALXGA1-X)(0.5)IN0.5P QUATERNARY ALLOYS
    KATO, H
    ADACHI, S
    NAKANISHI, H
    OHTSUKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 186 - 192
  • [46] OPTICAL CONTROL OF GROWTH OF ALXGA1-XAS BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY
    ASPNES, DE
    QUINN, WE
    GREGORY, S
    APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2707 - 2709
  • [47] Carbon incorporation in GaAs and AlxGa1-xAs layers grown by molecular-beam epitaxy
    Giannini, C.
    Gerardi, C.
    Tapfer, L.
    Fischer, A.
    Ploog, K.H.
    Journal of Applied Physics, 1993, 74 (01):
  • [48] THERMAL-CONVERSION OF ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ADACHI, S
    YAMAHATA, S
    APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1265 - 1267
  • [49] PREFERENTIAL DESORPTION OF GA FROM ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    KAWABE, M
    MATSUURA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L351 - L353
  • [50] PHOTOLUMINESCENCE SPECTRA OF HIGHLY DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    OGAWA, J
    TAMAMURA, K
    AKIMOTO, K
    MORI, Y
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2765 - 2768
12345