SUMMARY ABSTRACT - OPTICAL-PROPERTIES OF ALXGA1-X AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：1
|
作者：
REYNOLDS, DC
LITTON, CW
BAJAJ, KK
YU, PW
SINGH, J
PEARAH, PJ
MASSELINK, WT
HENDERSON, T
KLEM, J
MORKOC, H
机构：
[1] WRIGHT STATE UNIV,DAYTON,OH 45435
[2] UNIVERSAL ENERGY SYST INC,DAYTON,OH 45432
[3] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
[4] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：523 / 524
页数：2
相关论文
共 50 条
  • [21] CORRELATION BETWEEN STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS-ON-SI GROWN BY MOLECULAR-BEAM EPITAXY
    PLOOG, K
    GUIMARAES, FEG
    STOLZ, W
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 51 - 59
  • [22] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    KUNZEL, H
    KNECHT, J
    JUNG, H
    WUNSTEL, K
    PLOOG, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 167 - 173
  • [23] EFFECT OF AS-I ON THE OPTICAL-PROPERTIES OF GA1-XINXAS/INP GROWN BY MOLECULAR-BEAM EPITAXY
    POPP, M
    SCHIEFELE, M
    HURICH, M
    WACHTER, M
    SCHNEIDER, JM
    MARHEINEKE, B
    HEINECKE, H
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 528 - 532
  • [24] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    STALL, RA
    ZILKO, J
    SWAMINATHAN, V
    SCHUMAKER, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
  • [25] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    DRUMMOND, TJ
    LYONS, WG
    FISCHER, R
    THORNE, RE
    MORKOC, H
    HOPKINS, CG
    EVANS, CA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 957 - 960
  • [26] SUMMARY ABSTRACT - GROWTH OF CDTE AND HGCDTE BY MOLECULAR-BEAM EPITAXY
    HARRIS, KA
    HWANG, S
    BLANKS, DK
    COOK, JW
    SCHETZINA, JF
    OTSUKA, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 581 - 582
  • [27] SUMMARY ABSTRACT - GAAS1-YSBY GROWTH BY MOLECULAR-BEAM EPITAXY
    KERR, TM
    MCLEAN, TD
    WESTWOOD, DI
    MEDLAND, JD
    WOOD, CEC
    MURGATROYD, IJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 532 - 533
  • [28] Epitaxial growth of α-(AlxGa1-x)2O3 by suboxide molecular-beam epitaxy at 1 μm/h
    Steele, Jacob
    Azizie, Kathy
    Pieczulewski, Naomi
    Kim, Yunjo
    Mou, Shin
    Asel, Thaddeus J.
    Neal, Adam T.
    Jena, Debdeep
    Xing, Huili G.
    Muller, David A.
    Onuma, Takeyoshi
    Schlom, Darrell G.
    APL MATERIALS, 2024, 12 (04)
  • [29] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY
    MASSELINK, WT
    HENDERSON, T
    KLEM, J
    FISCHER, R
    PEARAH, P
    MORKOC, H
    HAFICH, M
    WANG, PD
    ROBINSON, GY
    APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311
  • [30] OPTICAL-PROPERTIES OF ZNSE/ZNMGSSE SINGLE QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    SUDA, J
    KAWAKAMI, Y
    FUJITA, S
    FUJITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7B): : L986 - L989
12345