A 1MB DRAM WITH A FOLDED CAPACITOR CELL STRUCTURE

被引：0
|
作者：
HORIGUCHI, F [1 ]
ITOH, Y [1 ]
IIZUKA, H [1 ]
OGURA, M [1 ]
MASUOKA, F [1 ]
机构：
[1] TOSHIBA CORP,DIV IC,KAWASAKI 210,JAPAN
来源：
ISSCC DIGEST OF TECHNICAL PAPERS | 1985年 / 28卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：244 / 245
页数：2
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