DESIGN CONSIDERATION OF A STATIC MEMORY CELL

被引：21
|
作者：
ANAMI, K
YOSHIMOTO, M
SHINOHARA, H
HIRATA, Y
NAKANO, T
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 04期
关键词：
D O I：
10.1109/JSSC.1983.1051965
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：414 / 417
页数：4
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