EFFECT OF HEAT-TREATMENT ON STRESS IN AMORPHOUS SILICON FILMS

被引:2
|
作者
KOOS, V [1 ]
NEUMANN, HG [1 ]
机构
[1] UNIV ROSTOCK,SEKT PHYS,ROSTOCK,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期
关键词
D O I
10.1002/pssa.2210360159
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K47 / K49
页数:3
相关论文
共 50 条
  • [41] THE EFFECT OF HEAT-TREATMENT CONDITIONS ON CRYSTALLIZATION OF AMORPHOUS FE-B ALLOYS
    ABROSIMOVA, GE
    ARONIN, AS
    BEZRUKOV, AV
    PANKRATOV, SP
    SEREBRYAKOV, AV
    PHYSICS OF METALS, 1982, 4 (01): : 114 - 122
  • [42] Effect of plasma treatment on crystallization behavior of amorphous silicon films
    Pangal, K
    Sturm, JC
    Wagner, S
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 577 - 582
  • [43] EFFECT OF HEAT-TREATMENT ON NATURE OF MULTILAYER SIO AND A1 FILMS
    ROBERTS, WG
    JENNINGS, TA
    CHEN, ST
    THIN SOLID FILMS, 1976, 39 (DEC) : 237 - 242
  • [44] EFFECT OF HEAT-TREATMENT ON THE ELECTRICAL-PROPERTIES OF CR/CU FILMS
    DAKHEL, AA
    THIN SOLID FILMS, 1994, 251 (02) : 103 - 104
  • [46] HEAT-TREATMENT OF SILICON DIOXIDE WITH DISPERSING AGENT
    ZORYA, LN
    PANASYUK, GP
    LAZAREV, VB
    BUDOVA, GP
    NIKOLAEVA, LN
    INORGANIC MATERIALS, 1992, 28 (02) : 278 - 283
  • [47] INFLUENCE OF NITROGEN HEAT-TREATMENT ON SILICON SURFACES
    FUTAGAMI, M
    HAMAZAKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) : 1343 - 1349
  • [48] Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films
    Deku, Felix
    Mohammed, Shakil
    Joshi-Imre, Alexandra
    Maeng, Jimin
    Danda, Vindhya
    Gardner, Timothy J.
    Cogan, Stuart F.
    JOURNAL OF BIOMEDICAL MATERIALS RESEARCH PART B-APPLIED BIOMATERIALS, 2019, 107 (05) : 1654 - 1661
  • [49] DEFECTS APPEARING IN SILICON DUE TO HEAT-TREATMENT
    KONOROVA, LF
    FIZIKA TVERDOGO TELA, 1974, 16 (02): : 547 - 549
  • [50] Heat-treatment induced modifications of porous silicon
    Dannefaer, S
    Wiebe, C
    Kerr, D
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1725 - 1729