HEAT-TREATMENT OF SILICON DIOXIDE WITH DISPERSING AGENT

被引：0
|
作者：
ZORYA, LN
PANASYUK, GP
LAZAREV, VB
BUDOVA, GP
NIKOLAEVA, LN
机构：
[1] RUSSIAN ACAD SCI,MOSCOW,USSR
[2] SIMFEROPOL MINERAL RESOURCES INST,SIMFEROPOL,UKRAINE,USSR
来源：
INORGANIC MATERIALS | 1992年 / 28卷 / 02期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：278 / 283
页数：6
相关论文
共 50 条
  • [1] Heat-treatment effects on porous silicon
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [2] HEAT-TREATMENT EFFECT ON POROUS SILICON
    LABUNOV, V
    BONDARENKO, V
    GLINENKO, L
    DOROFEEV, A
    TABULINA, L
    THIN SOLID FILMS, 1986, 137 (01) : 123 - 134
  • [3] HEAT-TREATMENT EFFECTS ON POROUS SILICON
    SABETDARIANI, R
    HANEMAN, D
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1346 - 1348
  • [4] INFLUENCE OF NITROGEN HEAT-TREATMENT ON SILICON SURFACES
    FUTAGAMI, M
    HAMAZAKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) : 1343 - 1349
  • [5] THE EFFECT OF HEAT-TREATMENT ON COMPENSATED CZ SILICON
    BARANSKII, PI
    BABICH, VM
    BARAN, NP
    BUGAY, AA
    DOTSENKO, YP
    KOVALCHUK, VB
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 533 - 536
  • [6] DEFECTS APPEARING IN SILICON DUE TO HEAT-TREATMENT
    KONOROVA, LF
    FIZIKA TVERDOGO TELA, 1974, 16 (02): : 547 - 549
  • [7] Heat-treatment induced modifications of porous silicon
    Dannefaer, S
    Wiebe, C
    Kerr, D
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1725 - 1729
  • [8] EXPERIMENTAL EXPERIENCE CONCERNING HEAT-TREATMENT OF TUNGSTEN DIOXIDE
    SASVARI, K
    ACTA TECHNICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1974, 78 (3-4): : 283 - 286
  • [9] MILD HEAT-TREATMENT AS AN AGENT OF GENETIC ASSIMILATION IN DROSOPHILA
    LAGE, CLS
    ROCHA, H
    ARQUIVOS DE BIOLOGIA E TECNOLOGIA, 1994, 37 (01): : 65 - 76
  • [10] EFFECT OF HEAT-TREATMENT OF THE PROPERTIES OF SILICON DOPED WITH NICKEL
    TALIPOV, FN
    BAKHADYRKHANOV, MK
    INORGANIC MATERIALS, 1992, 28 (02) : 200 - 203
12345