KINETICS OF GROWTH BY MOLECULAR-BEAM EPITAXY ON STEPPED SURFACES

被引：5
|
作者：
UCHIDA, T
机构：
[1] Department of Physics, Faculty of Science, Hokkaido University, Sapporo
来源：
PHYSICS LETTERS A | 1992年 / 161卷 / 04期
关键词：
D O I：
10.1016/0375-9601(92)90564-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The kinetics of growth by molecular-beam epitaxy (MBE) on stepped surfaces are examined on the solid-on-solid (SOS) model by solving a kinetic equation derived by the path probability method (PPM). The evolution of the surface roughness which is defined as the average number of lateral atom-vacancy pairs shows qualitatively the same features as those of the observed specular spot intensities in reflection high-energy electron diffraction (RHEED).
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页码：373 / 377
页数：5
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