GROWTH OF INGAASP BY MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
HOLAH, GD
EISELE, FL
MEEKS, EL
COX, NW
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期
关键词：
D O I：
10.1063/1.93405
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1073 / 1075
页数：3
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