THE GATE-VOLTAGE DEPENDENCE OF TELEGRAPH NOISE AMPLITUDES IN SMALL MOSFETS

被引:2
|
作者
UREN, MJ
KIRTON, MJ
机构
关键词
D O I
10.1016/0169-4332(89)90464-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:479 / 485
页数:7
相关论文
共 50 条
  • [1] RF Extraction of Gate-voltage Dependence of the Overlap and Fringing Capacitances in Deep-Submicron MOSFETs
    Kim, Ju-Young
    Choi, Min-Kwon
    Lee, Seonghearn
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 421 - 424
  • [2] GATE-VOLTAGE GENERATOR
    SMITH, G
    [J]. ELECTRONICS WORLD & WIRELESS WORLD, 1994, (1702): : 786 - 786
  • [3] The gate bias and geometry dependence of random telegraph signal amplitudes
    Martin, ST
    Li, GP
    Worley, E
    White, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) : 444 - 446
  • [4] Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs
    Luque Rodriguez, Abraham
    Jimenez Tejada, Juan A.
    Rodriguez-Bolivar, Salvador
    Almeida, Luciano Mendes
    Aoulaiche, Marc
    Claeys, Cor
    Simoen, Eddy
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2780 - 2786
  • [5] Gate-voltage dependence of Kondo effect in a triangular quantum dot
    Numata, T.
    Nisikawa, Y.
    Oguri, A.
    Hewson, A. C.
    [J]. 25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2, 2009, 150
  • [6] ON THE GATE-VOLTAGE AND DRAIN-VOLTAGE DEPENDENCE OF THE RTS AMPLITUDE IN SUBMICRON MOSTS
    SIMOEN, E
    DIERICKX, B
    DECANNE, B
    THOMA, F
    CLAEYS, C
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (04): : 353 - 358
  • [7] Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors
    Francis, Sarah A.
    Dasgupta, Aritra
    Fleetwood, Daniel M.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) : 503 - 510
  • [8] Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
    Balandin, A
    [J]. ELECTRONICS LETTERS, 2000, 36 (10) : 912 - 913
  • [9] Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes
    Akimoto, R.
    Kuroda, R.
    Teramoto, A.
    Mawaki, T.
    Ichino, S.
    Suwa, T.
    Sugawa, S.
    [J]. 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
  • [10] Gate Voltage-Dependence of Junction Capacitance in MOSFETs
    Kuk, Jinwook
    Lee, Seonghearn
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (10) : 5315 - 5318