THE GATE-VOLTAGE DEPENDENCE OF TELEGRAPH NOISE AMPLITUDES IN SMALL MOSFETS

被引：2
|
作者：
UREN, MJ
KIRTON, MJ
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90464-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：479 / 485
页数：7
相关论文
共 50 条
  • [31] Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET
    Phankong, Nathabhat
    Funaki, Tsuyoshi
    Hikihara, Takashi
    [J]. IEICE ELECTRONICS EXPRESS, 2010, 7 (07): : 480 - 486
  • [32] Gate voltage dependence of MOSFET 1/f noise statistics
    Ertuerk, Mete
    Xia, Tian
    Clark, William F.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (09) : 812 - 814
  • [33] (N+1)xVDD Gate-Voltage Boosting Circuit
    Woo, Ki-Chan
    Lee, Sang-Ho
    Kim, Jung-Ho
    Shin, Hyeon-Sam
    Yang, Byung-Do
    [J]. 2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2020,
  • [34] Gate-voltage studies of discrete electronic states in aluminum nanoparticles
    Ralph, DC
    Black, CT
    Tinkham, M
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (21) : 4087 - 4090
  • [35] Study of Gate Oxide/Channel Interface Properties of SON MOSFETs by Random Telegraph Signal and Low Frequency Noise
    Trabelsi, M'hamed
    Militaru, Liviu
    Sghaier, Nabil
    Savio, Andrea
    Monfray, Stephane
    Souifi, Abdelkader
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (03) : 402 - 408
  • [36] Random Telegraph Noise Induced Drain-Current Fluctuation during Dynamic Gate Bias in Si MOSFETs
    Feng, W.
    Yamada, K.
    Ohmori, K.
    [J]. 2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,
  • [37] A SIMPLE-MODEL OF THE DRAIN SATURATION VOLTAGE DEPENDENCE WITH GATE VOLTAGE FOR SHORT-CHANNEL MOSFETS
    GHIBAUDO, G
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 99 (02): : K149 - K153
  • [38] Magnetic flux and gate-voltage dependence of Kondo effect in quantum dot embedded in Aharonov-Bohm ring
    Yoshii, R.
    Eto, M.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04): : 856 - 859
  • [39] Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate NAND Flash Memory String
    Joe, Sung-Min
    Yi, Jeong-Hyong
    Park, Sung-Kye
    Shin, Hyungcheol
    Park, Byung-Gook
    Park, Young June
    Lee, Jong-Ho
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 67 - 73
  • [40] Gate Voltage Dependence of Channel Length Modulation for InGaAs n-channel MOSFETs
    Matsuda, Akihiro
    Hiroki, Akira
    Goto, Yuta
    Nakamura, Masaaki
    Yoon, JongChul
    [J]. 2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
12345