THE GATE-VOLTAGE DEPENDENCE OF TELEGRAPH NOISE AMPLITUDES IN SMALL MOSFETS

被引：2
|
作者：
UREN, MJ
KIRTON, MJ
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90464-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：479 / 485
页数：7
相关论文
共 50 条
  • [21] THE EFFECT OF GATE-VOLTAGE-DEPENDENT MOBILITY ON THERMAL NOISE IN MOSFETS
    VANDERZIEL, A
    BOSMAN, G
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (06) : 525 - 527
  • [22] Gate-voltage induced trions in suspended carbon nanotubes
    Yoshida, M.
    Popert, A.
    Kato, Y. K.
    [J]. PHYSICAL REVIEW B, 2016, 93 (04):
  • [23] Variability of Low Frequency Noise in Moderately-Sized MOSFETs - A Model for the Area- and Gate Voltage-Dependence
    Mavredakis, Nikolaos
    Habas, Predrag
    Acovic, Alexandre
    Meyer, Rene
    Bucher, Matthias
    [J]. 2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2015,
  • [24] GATE FLICKER NOISE IN MOSFETS
    HASLETT, JW
    KENDALL, EJM
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1111 - &
  • [25] Conductivity of a graphene strip: Width and gate-voltage dependencies
    Vasko, F. T.
    Zozoulenko, I. V.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (09)
  • [26] THRESHOLD VOLTAGE DEPENDENCE ON CHANNEL LENGTH IN SMALL GEOMETRY MOSFETS
    SRIVASTAVA, A
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 99 (01): : 303 - 308
  • [27] Back gate bias effect and layout dependence on Random Telegraph Noise in FDSOI technologies
    Srinivasan, P.
    Song, D.
    Rose, D.
    LaCroix, M.
    Dasgupta, A.
    [J]. 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
  • [28] Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator
    Chen, Bo
    Jin, Qi
    Tai, Lu
    Zhan, Xuepeng
    Chen, Jiezhi
    [J]. MICROELECTRONICS JOURNAL, 2022, 125
  • [29] Analysis of Sheet Thickness and Gate Voltage Dependence of Electrical Characteristics for Nanosheet MOSFETs
    Hosoda, Kosei
    Hiroki, Akira
    [J]. IEEJ Transactions on Electronics, Information and Systems, 2024, 144 (11) : 1032 - 1037
  • [30] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 90 - 92
12345