SEMI-INSULATING SILICON-NITRIDE (SINSIN) AS A RESISTIVE FIELD SHIELD

被引：17

作者：

OSENBACH, JW ^{[1
]}

KNOLLE, WR ^{[1
]}

机构：

[1] AT&T BELL LABS,READING,PA 19612

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/16.106248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed plasma-deposited semi-insulating silicon nitride (SinSiN) as a resistive sea passivation. In this paper we briefly review its properties, then we review how it can be used as a resistive sea. Finally, we show that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. We further show that SinSiN provides device immunity to surface charges, thereby improving yield and reliability. © 1990 IEEE

引用

页码：1522 / 1528

页数：7

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