Growth and high temperature performance of semi-insulating silicon carbide

被引：19
|
作者：
Reshanov, SA [1 ]
机构：
[1] St Petersburg State Electrotech Univ, Dept Microelect, St Petersburg 197376, Russia
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 3-6期
关键词：
doping; electrical properties; growth; semi-insulating SiC;
D O I：
10.1016/S0925-9635(99)00284-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The problems of obtaining insulating properties in bulk single-crystal silicon carbide by vanadium doping under the LETI method growth process are considered. The prime novelty of this work is the growth of a semi-insulating bulk single-crystal n-4H-SiC:V by the LETI method in vacuum from a vanadium and aluminium-containing source. The obtained 4H-SiC:V material possesses resistivity > 10(7) Omega cm at 20 degrees C and activation energy similar to 1.6 eV at 20-800 degrees C and can be applied as a semi-insulating substrate material for extreme electronics based on silicon carbide or nitrides. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
下载
收藏
页码：480 / 482
页数：3
相关论文
共 50 条
  • [1] High field high temperature performance of semi-insulating silicon carbide
    Sudarshan, TS
    Gradinaru, G
    Korony, G
    Gradinaru, SA
    Mitchel, W
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1392 - 1395
  • [2] Intrinsic deep levels in semi-insulating silicon carbide
    Mitchel, WC
    Mitchell, WD
    Landis, G
    QUANTUM SENSING AND NANOPHOTONIC DEVICES, 2004, 5359 : 284 - 289
  • [3] Particle detectors based on semi-insulating silicon carbide
    Rogalla, M
    Runge, K
    Söldner-Rembold, A
    NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 1999, 78 : 516 - 520
  • [4] Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
    Ruddy, Frank H.
    Seidel, John G.
    Flammang, Robert W.
    Singh, Ranbir
    Schroeder, John
    2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, 2009, : 5256 - +
  • [5] Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
    Mandal, Krishna C.
    Muzykov, Peter G.
    Krishna, Ramesh
    Hayes, Timothy
    Sudarshan, Tangali S.
    SOLID STATE COMMUNICATIONS, 2011, 151 (07) : 532 - 535
  • [6] Preparation of semi-insulating silicon carbide by vanadium doping during PVT bulk crystal growth
    Bickermann, M
    Hofmann, D
    Straubinger, TL
    Weingärtner, R
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 51 - 54
  • [7] Growth and characterization of large diameter semi-insulating 6H silicon carbide substrates
    Yoganathan, M
    Gupta, A
    Long, F
    Burton, JC
    Byrd, N
    Sostak, R
    Whitlock, J
    Thomas, N
    Anderson, T
    Saxler, A
    Mitchel, W
    2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2000, : 128 - 134
  • [8] Kinetics of the behavior of photosensitive impurities and defects in high-purity semi-insulating silicon carbide
    D. V. Savchenko
    B. D. Shanina
    S. N. Lukin
    E. N. Kalabukhova
    Physics of the Solid State, 2009, 51 : 733 - 740
  • [9] Kinetics of the behavior of photosensitive impurities and defects in high-purity semi-insulating silicon carbide
    Savchenko, D. V.
    Shanina, B. D.
    Lukin, S. N.
    Kalabukhova, E. N.
    PHYSICS OF THE SOLID STATE, 2009, 51 (04) : 733 - 740
  • [10] Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
    Mandal, Krishna C.
    Krishna, Ramesh M.
    Muzykov, Peter G.
    Das, Sandip
    Sudarshan, Tangali S.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (04) : 1992 - 1999
12345