High field high temperature performance of semi-insulating silicon carbide

被引：4
|
作者：
Sudarshan, TS
Gradinaru, G
Korony, G
Gradinaru, SA
Mitchel, W
机构：
[1] SC GOVERNORS SCH SCI & MATH,HARTSVILLE,SC 29550
[2] USAF,WRIGHT LAB,MLPO,WRIGHT PATTERSON AFB,OH 45433
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 10期
关键词：
silicon carbide; resistivity; temperature; electronic field;
D O I：
10.1016/S0925-9635(97)00103-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of ambient temperature (295-730 K) and pulsed electric fields (0.5-80 kV/cm) on the electrical properties of high resistivity single-crystal 6H-SiC is reported. It is shown that the resistivity of the undoped 6H-SiC varies strongly, with the ambient temperature following a temperature/field function dominated by an exponential factor containing the activation (ionization) energy of residual boron of 0.35 eV. The dominant activation energy of semi-insulating Vanadium-compensated material (6H-SiC:V) varies with the ambient temperature, increasing from approx. 0 eV at 295-320 K to approx. 0.8 eV at T > 600 K. This result can explain the viability of insulating 6H-SiC as a substrate for next-generation high temperature power microwave integrated circuits based on large bandgap semiconductors. (C) 1997 Elsevier Science S.A.
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页码：1392 / 1395
页数：4
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