Growth and high temperature performance of semi-insulating silicon carbide

被引：19
|
作者：
Reshanov, SA [1 ]
机构：
[1] St Petersburg State Electrotech Univ, Dept Microelect, St Petersburg 197376, Russia
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 3-6期
关键词：
doping; electrical properties; growth; semi-insulating SiC;
D O I：
10.1016/S0925-9635(99)00284-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The problems of obtaining insulating properties in bulk single-crystal silicon carbide by vanadium doping under the LETI method growth process are considered. The prime novelty of this work is the growth of a semi-insulating bulk single-crystal n-4H-SiC:V by the LETI method in vacuum from a vanadium and aluminium-containing source. The obtained 4H-SiC:V material possesses resistivity > 10(7) Omega cm at 20 degrees C and activation energy similar to 1.6 eV at 20-800 degrees C and can be applied as a semi-insulating substrate material for extreme electronics based on silicon carbide or nitrides. (C) 2000 Elsevier Science S.A. All rights reserved.
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页码：480 / 482
页数：3
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