GROWTH OF WIDE BAND-GAP POLYCRYSTALLINE SEMI-INSULATING POLYCRYSTALLINE SILICON

被引：2
|
作者：
SANDS, D [1 ]
BRUNSON, KM [1 ]
SPINK, DM [1 ]
THOMAS, CB [1 ]
MCNEILL, D [1 ]
MCDONALD, AA [1 ]
JENNINGS, S [1 ]
ROSSER, PJ [1 ]
机构：
[1] STC TECHNOL LTD,HARLOW,ESSEX,ENGLAND
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.584858
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：16 / 20
页数：5
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