GROWTH OF WIDE BAND-GAP POLYCRYSTALLINE SEMI-INSULATING POLYCRYSTALLINE SILICON

被引：2

作者：

SANDS, D ^{[1
]}

BRUNSON, KM ^{[1
]}

SPINK, DM ^{[1
]}

THOMAS, CB ^{[1
]}

MCNEILL, D ^{[1
]}

MCDONALD, AA ^{[1
]}

JENNINGS, S ^{[1
]}

ROSSER, PJ ^{[1
]}

机构：

[1] STC TECHNOL LTD,HARLOW,ESSEX,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：16 / 20

页数：5

共 50 条

[21] CONDUCTIVITY OF ION-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING POLYCRYSTALLINE SILICON
OZGUZ, VH
WORTMAN, JJ
HAUSER, JR
LITTLEJOHN, MA
ROZGONYI, GA
CURRAN, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : 665 - 671
[22] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[23] Depth inhomogeneity of deposited thin films: application to semi-insulating polycrystalline silicon films
Kucirkova, A
Navratil, K
Zemek, J
THIN SOLID FILMS, 1998, 323 (1-2) : 53 - 58
[24] Annealing effects on the electrical properties and microscopic structure of semi-insulating polycrystalline silicon films
1600, American Inst of Physics, Woodbury, NY, USA (75):
[25] DISTRIBUTION OF LOCAL STATES IN THE BAND-GAP OF SEMI-INSULATING CDTE-CL CRYSTALS
ARKADEVA, EN
MATVEEV, OA
MELNIKOVA, EV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 424 - 426
[26] SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED-CIRCUITS
MOCHIZUKI, H
AOKI, T
YAMOTO, H
OKAYAMA, M
ABE, M
ANDO, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 41 - 48
[27] Electrical and optical properties of semi-insulating polycrystalline silicon thin films: The role of microstructure and doping
Lombardo, S
Campisano, SU
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 17 (08): : 281 - 336
[28] IR AND RBS SPECTROSCOPY INVESTIGATION OF SEMI-INSULATING PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS
ANDRA, W
GOTZ, G
HOBERT, H
MISYUCHENKO, V
SAMUILOV, VA
STELMAKH, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (01): : 181 - 187
[29] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
SOLID STATE COMMUNICATIONS, 1977, 21 (06) : 591 - 593
[30] ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT
NI, J
ARNOLD, E
APPLIED PHYSICS LETTERS, 1981, 39 (07) : 554 - 556

← 1 2 3 4 5 →