SEMI-INSULATING SILICON-NITRIDE (SINSIN) AS A RESISTIVE FIELD SHIELD

被引：17
|
作者：
OSENBACH, JW [1 ]
KNOLLE, WR [1 ]
机构：
[1] AT&T BELL LABS,READING,PA 19612
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期
关键词：
D O I：
10.1109/16.106248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed plasma-deposited semi-insulating silicon nitride (SinSiN) as a resistive sea passivation. In this paper we briefly review its properties, then we review how it can be used as a resistive sea. Finally, we show that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. We further show that SinSiN provides device immunity to surface charges, thereby improving yield and reliability. © 1990 IEEE
引用
收藏
页码：1522 / 1528
页数：7
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