STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS

被引：69

作者：

HUANG, CY ^{[1
]}

GUHA, S ^{[1
]}

HUDGENS, SJ ^{[1
]}

机构：

[1] STAND OIL CO OHIO,RES LABS,CLEVELAND,OH 44115

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7460

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7460 / 7465

页数：6

共 50 条

[1] TRANSIENT PHOTOCONDUCTIVITY FROM THE STEADY-STATE IN UNDOPED AMORPHOUS-SILICON
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[J]. THIN SOLID FILMS, 1985, 125 (1-2) : 1 - 7
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[10] GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - A COMPARISON OF PHOTOEMISSION AND PHOTOCONDUCTIVITY RESULTS
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