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- [3] STEADY-STATE PHOTOCONDUCTIVITY AND RECOMBINATION PROCESS IN SPUTTERED HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2016 - 2025
- [4] TEMPERATURE-DEPENDENCE OF STEADY-STATE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 64 (06): : 675 - 688
- [5] HYDROGENATED AMORPHOUS BORON - TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : K51 - K56
- [6] STEADY-STATE PHOTOCONDUCTIVITY IN UNDOPED AMORPHOUS-SILICON [J]. AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 193 - 197
- [7] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465
- [10] TRANSIENT PHOTOCONDUCTIVITY FROM THE STEADY-STATE IN UNDOPED AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 1879 - 1883