GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - A COMPARISON OF PHOTOEMISSION AND PHOTOCONDUCTIVITY RESULTS

被引：24
|
作者：
VONROEDERN, B
MODDEL, G
机构：
来源：
SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 06期
关键词：
D O I：
10.1016/0038-1098(80)90250-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：467 / 471
页数：5
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