INFRARED QUENCHING OF PHOTOCONDUCTIVITY AND THE STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS

被引：32

作者：

VANIER, PE

GRIFFITH, RW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3098 / 3102

页数：5

共 50 条

[1] ON THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 72 (01): : 35 - 66
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[7] PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
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