INFRARED QUENCHING OF PHOTOCONDUCTIVITY AND THE STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS

被引：32
|
作者：
VANIER, PE
GRIFFITH, RW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期
关键词：
D O I：
10.1063/1.331058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3098 / 3102
页数：5
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