GROWTH UNIFORMITY STUDIES IN MOLECULAR-BEAM EPITAXY

被引：13
|
作者：
WASILEWSKI, ZR [1 ]
AERS, GC [1 ]
SPRINGTHORPE, AJ [1 ]
MINER, CJ [1 ]
机构：
[1] BELL NO RES LAB,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90949-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present the results of experimental measurements and numerical calculations of the layer uniformity of MBE grown GaAs layers on stationary and rotating wafers using different crucible geometries. We obtain excellent agreement between theory and experiment for the actual geometry used in the MBE deposition and describe the configuration required to obtain very good uniformity over a 3 inch rotating wafer. We also study the case of a trumpet crucible insert used as a simple way of improving layer uniformity.
引用
收藏
页码：70 / 74
页数：5
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