GROWTH UNIFORMITY STUDIES IN MOLECULAR-BEAM EPITAXY

被引：13
|
作者：
WASILEWSKI, ZR [1 ]
AERS, GC [1 ]
SPRINGTHORPE, AJ [1 ]
MINER, CJ [1 ]
机构：
[1] BELL NO RES LAB,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90949-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present the results of experimental measurements and numerical calculations of the layer uniformity of MBE grown GaAs layers on stationary and rotating wafers using different crucible geometries. We obtain excellent agreement between theory and experiment for the actual geometry used in the MBE deposition and describe the configuration required to obtain very good uniformity over a 3 inch rotating wafer. We also study the case of a trumpet crucible insert used as a simple way of improving layer uniformity.
引用
收藏
页码：70 / 74
页数：5
相关论文
共 50 条
  • [41] GROWTH AND DEVICE APPLICATIONS USING MOLECULAR-BEAM EPITAXY
    CHO, AY
    TSANG, WT
    [J]. THIN SOLID FILMS, 1979, 64 (01) : 175 - 175
  • [42] ELEMENTARY GROWTH-PROCESS OF MOLECULAR-BEAM EPITAXY
    NISHINAGA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 326 - 333
  • [43] MOLECULAR-BEAM EPITAXY GROWTH OF AN ULTRAHIGH FINESSE MICROCAVITY
    OESTERLE, U
    STANLEY, RP
    HOUDRE, R
    GAILHANOU, M
    ILEGEMS, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1313 - 1317
  • [44] GROWTH OF METAL CERAMIC INTERFACES BY MOLECULAR-BEAM EPITAXY
    FLYNN, CP
    YADAVALLI, S
    [J]. ACTA METALLURGICA ET MATERIALIA, 1992, 40 : S45 - S52
  • [45] GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY USING TRISDIMETHYLAMINOARSINE
    GOTO, S
    NOMURA, Y
    MORISHITA, Y
    KATAYAMA, Y
    OHNO, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 149 (1-2) : 143 - 146
  • [46] EVALUATION OF SUBSTRATES FOR GROWTH OF HGCDTE BY MOLECULAR-BEAM EPITAXY
    DINAN, JH
    QADRI, SB
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2158 - 2161
  • [47] AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS
    SUDIJONO, J
    JOHNSON, MD
    ELOWITZ, MB
    SNYDER, CW
    ORR, BG
    [J]. SURFACE SCIENCE, 1993, 280 (03) : 247 - 257
  • [48] SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1011 - 1015
  • [49] PHOTOLUMINESCENCE STUDIES OF SILICON MOLECULAR-BEAM EPITAXY LAYERS
    ROBBINS, DJ
    KUBIAK, RAA
    PARKER, EHC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 588 - 591
  • [50] AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS
    ORR, BG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 1032 - 1032
12345