SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：53
|
作者：
CHANG, LL [1 ]
SEGMULLER, A [1 ]
ESAKI, L [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 01期
关键词：
D O I：
10.1063/1.88558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：39 / 41
页数：3
相关论文
共 50 条
  • [31] DEFECTS IN MOLECULAR-BEAM EPITAXY GROWN GAALAS LAYERS
    FENG, SL
    ZAZOUI, M
    BOURGOIN, JC
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (01) : 68 - 69
  • [32] PHOTOLUMINESCENCE OF THE 78 MEV ACCEPTOR IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    MIHARA, M
    MANNOH, M
    SHINOZAKI, K
    NARITSUKA, S
    ISHII, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07): : L611 - L613
  • [33] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TAKAHASHI, K
    KAWADA, H
    UEDA, S
    FURUSE, M
    SHIRAYONE, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857
  • [34] ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHAI, YG
    PAO, YC
    HIERL, T
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1327 - 1329
  • [35] ON THE MICROSTRUCTURE AND INTERFACIAL STRUCTURE OF INSB LAYERS GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
    KIELY, CJ
    CHYI, JI
    ROCKETT, A
    MORKOC, H
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 60 (03): : 321 - 337
  • [36] LOW-FREQUENCY NOISE IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TACANO, M
    SUGIYAMA, Y
    TAGUCHI, T
    SOGA, H
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (07) : 1215 - 1219
  • [37] INVESTIGATION OF HIGH-QUALITY GAAS-IN LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    UDDIN, A
    ANDERSSON, TG
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 3101 - 3106
  • [38] COMPARISON OF THE GAAS-LAYERS GROWN ON POROUS SI AND ON SI BY MOLECULAR-BEAM EPITAXY
    WU, BJ
    WANG, KL
    MII, YJ
    YOON, YS
    WU, AT
    GEORGE, T
    WEBER, E
    [J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 343 - 348
  • [39] Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures
    Galiev, GB
    Imamov, RM
    Medvedev, BK
    Mokerov, VG
    Mukhamedzhanov, EK
    Pashaev, EM
    Cheglakov, VB
    [J]. SEMICONDUCTORS, 1997, 31 (10) : 1003 - 1005
  • [40] UNDOPED, SEMI-INSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TEMKIN, H
    HWANG, JCM
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 178 - 180
12345