ELIMINATION OF PAIR DEFECTS FROM GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：24
|
作者：
CHAI, YG [1 ]
PAO, YC [1 ]
HIERL, T [1 ]
机构：
[1] VARIAN ASSOCIATES,DIV SOLID STATE MICROWAVE,SANTA CLARA,CA 95050
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期
关键词：
D O I：
10.1063/1.96269
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1327 / 1329
页数：3
相关论文
共 50 条
  • [1] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TAKAHASHI, K
    KAWADA, H
    UEDA, S
    FURUSE, M
    SHIRAYONE, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857
  • [2] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    AKIMOTO, K
    DOHSEN, M
    ARAI, M
    WATANABE, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122
  • [3] INVESTIGATION OF RIPPLE DEFECTS ON MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    KADHIM, NJ
    MUKHERJEE, D
    MEHTA, M
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (09) : 623 - 625
  • [4] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [5] PARTICULATES - A DIRECT ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    WENG, SL
    WEBB, C
    CHAI, YG
    BANDY, SG
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 267 - 271
  • [6] GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS
    TAKAMORI, A
    MIYAUCHI, E
    ARIMOTO, H
    BAMBA, Y
    HASHIMOTO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L520 - L522
  • [7] UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    COVINGTON, DW
    MEEKS, EL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 847 - 850
  • [8] COMPARISON OF THE GAAS-LAYERS GROWN ON POROUS SI AND ON SI BY MOLECULAR-BEAM EPITAXY
    WU, BJ
    WANG, KL
    MII, YJ
    YOON, YS
    WU, AT
    GEORGE, T
    WEBER, E
    [J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 343 - 348
  • [9] UNDOPED, SEMI-INSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    TEMKIN, H
    HWANG, JCM
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 178 - 180
  • [10] EVIDENCE FOR INCLUSIONS IN RHODIUM DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS
    GUENAIS, B
    GUIVARCH, A
    CHAPLAIN, R
    POUDOULEC, A
    GUILLOT, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 96 (01) : 119 - 126
12345