ON THE MICROSTRUCTURE AND INTERFACIAL STRUCTURE OF INSB LAYERS GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY

被引：26
|
作者：
KIELY, CJ
CHYI, JI
ROCKETT, A
MORKOC, H
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1989年 / 60卷 / 03期
关键词：
D O I：
10.1080/01418618908213865
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：321 / 337
页数：17
相关论文
共 50 条
  • [1] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    KUDRYASHOV, AA
    POROTIKOV, AP
    VARAKSIN, GA
    KHUSID, LB
    [J]. INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
  • [2] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INSB LAYERS ON GAAS SUBSTRATES
    SODERSTROM, JR
    CUMMING, MM
    YAO, JY
    ANDERSSON, TG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 337 - 343
  • [3] GROWTH AND CHARACTERIZATION OF INSB/GAAS GROWN USING MOLECULAR-BEAM EPITAXY
    DAVIS, JL
    THOMPSON, PE
    WAGNER, RJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S225 - S228
  • [4] Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy
    Ruvimov, S
    LilientalWeber, Z
    Washburn, J
    Drummond, TJ
    Hafich, M
    Lee, SR
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (20) : 2931 - 2933
  • [5] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
    VASQUEZ, RP
    LEWIS, BF
    GRUNTHANER, FJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
  • [6] SURFACE-MORPHOLOGY OF GAAS-(100) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    POROTIKOV, AP
    VARAKSIN, GA
    PETROV, AG
    [J]. INORGANIC MATERIALS, 1985, 21 (02) : 148 - 150
  • [7] HETEROEPITAXIAL GROWTH OF INSB ON (100)GAAS USING MOLECULAR-BEAM EPITAXY
    WILLIAMS, GM
    WHITEHOUSE, CR
    MCCONVILLE, CF
    CULLIS, AG
    ASHLEY, T
    COURTNEY, SJ
    ELLIOTT, CT
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1189 - 1191
  • [8] DEEP STATES IN GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HUANG, YJ
    IOANNOU, DE
    ILIADIS, A
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S31 - S31
  • [9] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [10] MODIFICATION OF INTERFACIAL CARRIER DEPLETION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    REYNOLDS, CL
    GEVA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 303 - 305
12345