DEEP STATES IN GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
HUANG, YJ
IOANNOU, DE
ILIADIS, A
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,JOINT PROGRAM ADV ELECTR MAT,COLLEGE PK,MD 20742
[2] UNIV MARYLAND,PHYS SCI LAB,COLLEGE PK,MD 20742
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：S31 / S31
页数：1
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