DEEP STATES IN GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
HUANG, YJ
IOANNOU, DE
ILIADIS, A
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,JOINT PROGRAM ADV ELECTR MAT,COLLEGE PK,MD 20742
[2] UNIV MARYLAND,PHYS SCI LAB,COLLEGE PK,MD 20742
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：S31 / S31
页数：1
相关论文
共 50 条
  • [41] DOMINANT DEEP-LEVEL IN ANNEALED LOW-TEMPERATURE GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    LIN, TC
    KAIBE, HT
    OKUMURA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1651 - L1654
  • [42] DEEP DONORS IN GASB GROWN BY MOLECULAR-BEAM EPITAXY
    POOLE, I
    LEE, ME
    CLEVERLEY, IR
    PEAKER, AR
    SINGER, KE
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (16) : 1645 - 1647
  • [43] Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates
    Yakushev, M. V.
    Mynbaev, K. D.
    Bazhenov, N. L.
    Varavin, V. S.
    Mikhailov, N. N.
    Marin, D. V.
    Dvoretsky, S. A.
    Sidorov, Yu. G.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 469 - 472
  • [44] CRYSTALLINITY IMPROVEMENT OF HGCDTE ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SASAKI, T
    TOMONO, M
    ODA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 785 - 789
  • [45] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    LEOPOLD, DJ
    BALLINGALL, JM
    WROGE, ML
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474
  • [46] DIFFUSION OF ZINC INTO GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES
    SIN, YK
    HWANG, Y
    ZHANG, T
    KOLBAS, RM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 465 - 469
  • [47] Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
    Bert, NA
    Chaldyshev, VV
    Lubyshev, DI
    Preobrazhenskii, VV
    Semyagin, BR
    [J]. SEMICONDUCTORS, 1995, 29 (12) : 1170 - 1171
  • [48] Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy
    Ashrafi, ABMA
    Suemune, I
    Kumano, H
    Ok, YW
    Seong, TY
    [J]. COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 307 - 312
  • [49] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    VINA, L
    WANG, WI
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 36 - 37
  • [50] FMR OF CUBIC COBALT GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
    PRINZ, GA
    VITTORIA, C
    KREBS, JJ
    HATHAWAY, KB
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 3672 - 3672
12345