INGAAS/GAAS/INGAP MULTIPLE-QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：30
|
作者：
KUO, JM
CHEN, YK
WU, MC
CHIN, MA
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期
关键词：
D O I：
10.1063/1.105858
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the first room-temperature operation of aluminum-free In0.2Ga0.8As/GaAs/In0.49Ga0.51P multiple-quantum-well lasers grown by gas-source molecular beam epitaxy. These lasers have low threshold current density J(th) of 177 A/cm2, high internal quantum efficiency of 91%, and low internal waveguide loss of 9.1 cm-1. The characteristic temperature T0 is 150 K, which is the highest value ever reported. These results demonstrate that gas-source molecular beam epitaxy is suitable for growing high-quality In0.2Ga0.8As/GaAs/In0.49Ga0.51P lasers.
引用
收藏
页码：2781 / 2783
页数：3
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