LOW CURRENT BASE-COLLECTOR BOUNDARY-CONDITIONS IN GHZ FREQUENCY TRANSISTORS

被引：7

作者：

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO,ELECT ENGN DEPT,WATERLOO,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 10期

关键词：

D O I：

10.1016/0038-1101(75)90005-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：845 / 847

页数：3

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