LOW CURRENT BASE-COLLECTOR BOUNDARY-CONDITIONS IN GHZ FREQUENCY TRANSISTORS

被引：7
|
作者：
ROULSTON, DJ [1 ]
机构：
[1] UNIV WATERLOO,ELECT ENGN DEPT,WATERLOO,ONTARIO,CANADA
来源：
SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 10期
关键词：
D O I：
10.1016/0038-1101(75)90005-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：845 / 847
页数：3
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