INVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEM

被引：1
|
作者：
PARK, HH [1 ]
NAHM, S [1 ]
SUH, KS [1 ]
LEE, JL [1 ]
CHO, KI [1 ]
KIM, KS [1 ]
PARK, SC [1 ]
LEE, JS [1 ]
LEE, YH [1 ]
机构：
[1] KYUNGPOOK NATL UNIV,DEPT ELECTR ENGN,TAEGU,SOUTH KOREA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00128-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thermal behavior of antifusing device characteristic with SiO2/Ti0.1W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400 degrees C and 600 degrees C, respectively. Through in situ heat treatment at 400 degrees C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600 degrees C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.
引用
收藏
页码：149 / 155
页数：7
相关论文
共 50 条
  • [1] Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system
    Baek, Jong Tae
    Park, Hyung-Ho
    Cho, Kyung-Ik
    Yoo, Hyung Joun
    Kang, Sang Won
    Ahn, Byung Tae
    Journal of Applied Physics, 1995, 78 (12):
  • [2] Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system
    Baek, JT
    Park, HH
    Cho, KI
    Yoo, HJ
    Kang, SW
    Ahn, BT
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) : 7074 - 7079
  • [3] Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system
    Park, H.H.
    Nahm, S.
    Suh, K.S.
    Lee, J.L.
    Cho, K.-I.
    Kim, K.S.
    Park, S.-C.
    Lee, J.-S.
    Lee, Y.-H.
    Journal of Non-Crystalline Solids, 1995, 187
  • [4] Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [5] Effects of Ti addition on the morphology, interfacial reaction, and diffusion of Cu on SiO2
    Liu, CJ
    Jeng, JS
    Chen, JS
    Lin, YK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2361 - 2366
  • [6] REACTION-KINETICS IN THE TI/SIO2 SYSTEM AND TI THICKNESS DEPENDENCE ON REACTION-RATE
    RUSSELL, SW
    STRANE, JW
    MAYER, JW
    WANG, SQ
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 257 - 263
  • [7] Wetting and interfacial reaction between liquid Ag-Cu-Ti and SiO2f/SiO2 composites
    Zhang, L. X.
    Chang, Q.
    Sun, Z.
    Feng, J. C.
    VACUUM, 2020, 171
  • [8] In Situ Microscale Observation of FeOx–SiO2 Interfacial Reaction
    Yuko Goto
    Sakiko Kawanishi
    Shungo Natsui
    Jun-ichi Takahashi
    Hiroshi Nogami
    Metallurgical and Materials Transactions B, 2024, 55 : 1735 - 1753
  • [9] Interfacial reaction of Co Fe films with SiO2 substrates
    Bendersky, L. A.
    Kazantseva, N. V.
    Kattner, U. R.
    Wang, K.
    Oleshko, V. P.
    Hunter, D.
    Takeuchi, I.
    ACTA MATERIALIA, 2013, 61 (11) : 4180 - 4190
  • [10] Effects of Ti content on the wetting behavior and chemical reaction in AgCuTi/SiO2 system
    Xin, Chenglai
    Yan, Jiazhen
    Xin, Chengyun
    Wang, Qingyuan
    Feng, Wei
    Wang, Haomin
    VACUUM, 2019, 167 : 152 - 158
12345