INVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEM

被引：1
|
作者：
PARK, HH [1 ]
NAHM, S [1 ]
SUH, KS [1 ]
LEE, JL [1 ]
CHO, KI [1 ]
KIM, KS [1 ]
PARK, SC [1 ]
LEE, JS [1 ]
LEE, YH [1 ]
机构：
[1] KYUNGPOOK NATL UNIV,DEPT ELECTR ENGN,TAEGU,SOUTH KOREA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00128-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thermal behavior of antifusing device characteristic with SiO2/Ti0.1W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400 degrees C and 600 degrees C, respectively. Through in situ heat treatment at 400 degrees C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600 degrees C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.
引用
收藏
页码：149 / 155
页数：7
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