ANNEALING BEHAVIOR OF ALUMINUM IMPLANTED GERMANIUM

被引：6
|
作者：
RAISANEN, J
机构：
来源：
SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 01期
关键词：
D O I：
10.1016/0038-1101(82)90093-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：49 / 54
页数：6
相关论文
共 50 条
  • [31] Annealing behavior of implanted helium in indium phosphide
    Simpson, TW
    Mitchell, IV
    APPLIED PHYSICS LETTERS, 2001, 78 (02) : 207 - 209
  • [32] THE ANNEALING BEHAVIOR OF ANTIMONY IMPLANTED POLYCRYSTALLINE SILICON
    TANDON, JL
    HARRISON, HB
    NEOH, CL
    SHORT, KT
    WILLIAMS, JS
    APPLIED PHYSICS LETTERS, 1982, 40 (03) : 228 - 230
  • [33] ANNEALING BEHAVIOR OF KRYPTON-IMPLANTED ALUMINUM .1. DIFFRACTION EFFECTS FROM KRYPTON BUBBLES
    HASHIMOTO, I
    YORIKAWA, H
    MITSUYA, H
    YAMAGUCHI, H
    TAKAISHI, K
    KIKUCHI, T
    FURUYA, K
    YAGI, E
    IWAKI, M
    JOURNAL OF NUCLEAR MATERIALS, 1987, 149 (01) : 69 - 73
  • [34] LASER ANNEALING BEHAVIOR OF AS-IMPLANTED SILICON AND THE MECHANISM OF LASER ANNEALING
    LIU, SH
    WANG, ZL
    LU, WX
    ZHANG, TH
    JI, CZ
    CHINESE PHYSICS, 1982, 2 (01): : 216 - 223
  • [35] EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE
    LUCKE, W
    COMAS, J
    HUBLER, G
    DUNNING, K
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 994 - 997
  • [36] Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing
    Rambach, M
    Bauer, AJ
    Frey, L
    Friedrichs, P
    Ryssel, H
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 621 - 624
  • [37] Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
    N. A. Sobolev
    O. V. Aleksandrov
    V. I. Sakharov
    I. T. Serenkov
    E. I. Shek
    A. E. Kalyadin
    E. O. Parshin
    N. S. Melesov
    Semiconductors, 2019, 53 : 153 - 155
  • [38] Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
    Sobolev, N. A.
    Aleksandrov, O. V.
    Sakharov, V. I.
    Serenkov, I. T.
    Shek, E. I.
    Kalyadin, A. E.
    Parshin, E. O.
    Melesov, N. S.
    SEMICONDUCTORS, 2019, 53 (02) : 153 - 155
  • [39] PERMEATION BEHAVIOR OF DEUTERIUM IMPLANTED INTO PURE ALUMINUM
    HAYASHI, T
    OKUNO, K
    YAMANAKA, K
    NARUSE, Y
    JOURNAL OF ALLOYS AND COMPOUNDS, 1992, 189 (02) : 195 - 199
  • [40] Pitting behavior of aluminum ion implanted with nitrogen
    McCafferty, E
    Natishan, PM
    Hubler, GK
    CORROSION, 1997, 53 (07) : 556 - 561
12345