EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE

被引：13
|
作者：
LUCKE, W [1 ]
COMAS, J [1 ]
HUBLER, G [1 ]
DUNNING, K [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期
关键词：
D O I：
10.1063/1.321720
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：994 / 997
页数：4
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