EFFECTS OF ANNEALING ON PROFILES OF ALUMINUM IMPLANTED IN SILICON-CARBIDE

被引：13

作者：

LUCKE, W ^{[1
]}

COMAS, J ^{[1
]}

HUBLER, G ^{[1
]}

DUNNING, K ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：994 / 997

页数：4

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