ANNEALING BEHAVIOR OF ALUMINUM IMPLANTED GERMANIUM

被引：6
|
作者：
RAISANEN, J
机构：
来源：
SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 01期
关键词：
D O I：
10.1016/0038-1101(82)90093-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：49 / 54
页数：6
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