INTERMEDIATE TEMPERATURE MOLECULAR BEAM-EPITAXY GROWTH FOR DESIGN OF LARGE-AREA METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

被引:9
|
作者
NABET, B
PAOLELLA, A
COOKE, P
LEMUENE, ML
MOERKIRK, RP
LIOU, LC
机构
[1] USA,RES LAB,ELECTR & POWER SOURCES DIRECTORATE,FT MONMOUTH,NJ 07703
[2] DREXEL UNIV,DEPT ELECT & COMP ENGN,PHILADELPHIA,PA 19104
关键词
D O I
10.1063/1.111322
中图分类号
O59 [应用物理学];
学科分类号
摘要
Large-area metal-semiconductor-metal (MSM) photodetectors are fabricated on molecular beam epitaxy (MBE) grown GaAs material at growth temperatures ranging from 250 to 500-degrees-C. it is shown that materials grown at intermediate temperatures are a suitable choice for large-area, high photocurrent detectors. Particularly, MSM devices made from material grown at around 350-degrees-C have a dark current of the same magnitude as those grown at lower temperatures while having a substantially larger photocurrent. Higher low-field mobility at intermediate temperatures should give these devices speed advantage as well. A change of close to 4 orders of magnitude in dark current and more than 2 orders of magnitude in light response is observed for this temperature range.
引用
收藏
页码:3151 / 3153
页数:3
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