High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors

被引:22
|
作者
Seo, SW [1 ]
Cho, SY
Huang, S
Shin, JJ
Jokerst, NM
Brown, AS
Brooke, MA
机构
[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
electro-optic sampling; high-speed photodetector; metal-semiconductor-metal (MSM) photodetector; thin-film photodetector;
D O I
10.1109/JSTQE.2004.831677
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-mum diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.
引用
收藏
页码:686 / 693
页数:8
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