High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

被引：11

作者：

Yuang, RH ^{[1
]}

Chyi, JI ^{[1
]}

Lin, W ^{[1
]}

Tu, YK ^{[1
]}

机构：

[1] MINIST TRANSPORTAT & COMMUN,TELECOMMUN LABS,CHUNGLI,TAIWAN

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1996年 / 28卷 / 10期

关键词：

D O I：

10.1007/BF00326205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance In0.9Ga0.1 P-InP-InGaAs metal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 x 50 mu m(2) and different finger spacings of 2, 3 and 4 mu m, all exhibit high responsivities over 0.7 AW(-1) and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.

引用

页码：1327 / 1334

页数：8

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