HIGH-PERFORMANCE LARGE-AREA INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

被引:10
|
作者
HIERONYMI, F
BOTTCHER, EH
DROGE, E
KUHL, D
BIMBERG, D
机构
[1] Institut für Festkorperphysik I der, Technischen Universität Berlin
关键词
D O I
10.1109/68.238251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors. With a 350-mum X 350-mum large active area, the detectors offer the excellent feature of 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/mum2, and the CW responsivity is 0.4 A/W at 1.3-mum wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and a low capacitance.
引用
收藏
页码:910 / 913
页数:4
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