Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications

被引：0
|
作者：
Paolella, A [1 ]
Tait, G [1 ]
Cooke, P [1 ]
Nabet, B [1 ]
Tousley, B [1 ]
机构：
[1] USA,CECOM,RES DEV & ENGN CTR,FT MONMOUTH,NJ 07703
来源：
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：915 / 918
页数：4
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