CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

|

作者：

GONDA, S

MATSUSHIMA, Y

MAKITA, Y

MUKAI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 07期

关键词：

D O I：

10.1143/JJAP.14.935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：935 / 942

页数：8

相关论文

共 50 条

[31] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY
KOBAYASHI, N
BENCHIMOL, JL
ALEXANDRE, F
GAO, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1907 - 1909
[32] IMPROVEMENT IN THE CRYSTALLINE QUALITY OF HETEROEPITAXIAL GAAS ON SI FILMS GROWN BY MODULATED MOLECULAR-BEAM EPITAXY
LEE, HP
LIU, XM
WANG, S
GEORGE, T
WEBER, ER
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2695 - 2697
[33] CRYSTALLINITY IMPROVEMENT OF HGCDTE ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SASAKI, T
TOMONO, M
ODA, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 785 - 789
[34] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
LEOPOLD, DJ
BALLINGALL, JM
WROGE, ML
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474
[35] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
VINA, L
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 36 - 37
[36] FMR OF CUBIC COBALT GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
PRINZ, GA
VITTORIA, C
KREBS, JJ
HATHAWAY, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 3672 - 3672
[37] EVIDENCE OF ISOVALENT IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
LEROUX, M
NEU, G
CONTOUR, JP
MASSIES, J
VERIE, C
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2996 - 2998
[38] HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
WANG, WI
MARKS, RF
VINA, L
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 937 - 939
[39] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ENQUIST, P
WICKS, GW
EASTMAN, LF
HITZMAN, C
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4130 - 4134
[40] DEEP STATES IN GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
HUANG, YJ
IOANNOU, DE
ILIADIS, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S31 - S31

← 1 2 3 4 5 →