CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

|

作者：

GONDA, S

MATSUSHIMA, Y

MAKITA, Y

MUKAI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 07期

关键词：

D O I：

10.1143/JJAP.14.935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：935 / 942

页数：8

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