FREQUENCY-DEPENDENT CONDUCTIVITY IN BORON-DOPED AND PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS

被引：2
|
作者：
GRASSO, V
GIORGIANNI, U
NERI, F
TRUSSO, S
机构：
[1] CNR, Agata-Messina, Italy
来源：
THIN SOLID FILMS | 1992年 / 209卷 / 01期
关键词：
D O I：
10.1016/0040-6090(92)90016-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron- and phosphorus-doped hydrogenated amorphous silicon films were obtained by a reactive evaporation method. The influence of doping on a.c. conductivity was investigated in the frequency range from 10 Hz to 100 kHz and in the temperature range from 150 to 450 K. For all the samples high frequency conductivity follows the A-omega(s) law. Experimental data were analysed with the quantum mechanical tunnelling and the correlated barrier hopping models. using the pair and the extended pair approximations.
引用
收藏
页码：97 / 103
页数：7
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