DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：138

作者：

HVAM, JM ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.46.371

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：371 / 374

页数：4

共 50 条

[1] DISTRIBUTION OF RECOMBINATION COEFFICIENTS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OHEDA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3803 - 3808
[2] CHARACTERIZATION OF TRANSPORT PARAMETERS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OHEDA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2925 - 2930
[3] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON
WRONSKI, CR
ABELES, B
TIEDJE, T
CODY, GD
[J]. SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1423 - 1426
[4] EXCITATION-ENERGY DEPENDENCE OF ELECTRON LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OHEDA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4197 - 4203
[5] DEFECT FROZEN PHENOMENA IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OSAKA, Y
NASU, H
AKAMATSU, C
HAYASHI, R
[J]. NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1989, 97 (07): : 699 - 705
[6] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
BRODSKY, MH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4548 - 4549
[7] DISPERSIVE TRANSPORT AND TRAP SATURATION IN DOPED HYDROGENATED AMORPHOUS-SILICON
KRISTENSEN, IK
HVAM, JM
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (09) : 845 - 848
[8] LIGHT-INDUCED DEFECTS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OKUSHI, H
YAMASAKI, S
TANAKA, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 141 (1-3) : 176 - 187
[9] SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING
JACKSON, WB
NEMANICH, RJ
THOMPSON, MJ
WACKER, B
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 6936 - 6945
[10] STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
KAZANSKII, AG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 915 - 917

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