DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：138

作者：

HVAM, JM ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.46.371

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：371 / 374

页数：4

共 50 条

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