THEORY OF DEFECT FORMATION IN THE GLOW-DISCHARGE DEPOSITION OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：11

|

作者：

KAMPAS, FJ

VANIER, PE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3654 / 3658

页数：5

相关论文

共 50 条

[1] MECHANISMS INVOLVED IN THE GLOW-DISCHARGE DEPOSITION OF DOPED HYDROGENATED AMORPHOUS-SILICON
KAMPAS, FJ
VANIER, PE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 25 - 29
[2] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
MATSUDA, A
TANAKA, K
[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 171 - 187
[3] CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION OF SILANE
SQUELARD, S
ZELLAMA, K
GERMAIN, P
BOURDON, B
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1981, 16 (12): : 657 - 662
[4] THE GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
BHAT, PK
CHATHAM, H
SHING, YH
PERRY, JW
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1383 - 1386
[5] DEFECT FROZEN PHENOMENA IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OSAKA, Y
NASU, H
AKAMATSU, C
HAYASHI, R
[J]. NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1989, 97 (07): : 699 - 705
[6] BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE
ANDO, K
AOZASA, M
PYON, RG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 413 - 415
[7] HYDROGENATED AMORPHOUS-SILICON FILMS BY 60 HZ GLOW-DISCHARGE DEPOSITION
FRAGALLI, JF
MISOGUTI, L
NAKAGAITO, AN
GRIVICKAS, V
BAGNATO, VS
BRANZ, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 668 - 671
[8] THE EFFICIENCY OF GAS USAGE IN GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
SMITH, GJ
MILNE, WI
[J]. SOLAR ENERGY MATERIALS, 1984, 9 (04): : 459 - 470
[9] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
COLLINS, RW
PAWLOWSKI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1160 - 1166
[10] INFLUENCE OF DEPOSITION CONDITIONS ON PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY RF GLOW-DISCHARGE
NISHIKAWA, S
KAKINUMA, H
WATANABE, T
NIHEI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (06): : 639 - 645

← 1 2 3 4 5 →